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PD - 91787H
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level IRHNA57Z60 100K Rads (Si) IRHNA53Z60 300K Rads (Si) IRHNA54Z60 500K Rads (Si) RDS(on) ID 0.0035 75A* 0.0035 75A* 0.0035 75A* 75A*
IRHNA57Z60 JANSR2N7467U2 30V, N-CHANNEL
REF: MIL-PRF-19500/683
5
TECHNOLOGY
QPL Part Number JANSR2N7467U2 JANSF2N7467U2 JANSG2N7467U2 JANSH2N7467U2
IRHNA58Z60 1000K Rads (Si) 0.0040
SMD-2
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page 75* 75* 300 250 2.0 20 500 75 25 0.83 -55 to 150 300 (for 5s) 3.3 (Typical)
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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1
04/24/06
IRHNA57Z60, JANSR2N7467U2
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
30 -- -- 2.0 45 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.026 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.0035 4.0 -- 10 25 100 -100 200 55 40 35 125 80 50 -- V V/C V S( ) A
Test Conditions
VGS = 0V, I D = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 75A A VDS = VGS, ID = 1.0mA VDS 15V, IDS = 45A A VDS= 24V ,VGS=0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, I D = 45A VDS = 15V VDD = 15V, ID = 45A, VGS =12V, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
9110 4620 150
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 75* 300 1.3 165 690
Test Conditions
A
Tj = 25C, IS = 75A, VGS = 0V A Tj = 25C, IF = 45A, di/dt 100A/s VDD 25V A
V ns nC
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
Min Typ Max
-- -- -- 1.6 0.5 --
Units
C/W
Test Conditions
soldered to a 2" square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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Radiation Characteristics
IRHNA57Z60, JANSR2N7467U2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source A On-State Resistance (SMD-2) Diode Forward Voltage A Up to 500K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 30 2.0 -- -- -- -- -- -- -- 4.0 100 -100 10 0.004 0.0035 1.3 30 1.5 -- -- -- -- -- -- -- 4.0 100 -100 25 0.0045 0.004 1.3 V nA A V
Test Conditions
VGS = 0V, I D = 1.0mA VGS = VDS , ID = 1.0mA VGS = 20V VGS = -20 V VDS =24V, VGS =0V VGS = 12V, ID =45A VGS = 12V, ID =45A VGS = 0V, IS = 45A
1. Part numbers IRHNA57Z60 (JANSR2N7467U2), IRHNA53Z60 (JANSF2N7467U2) and IRHNA54Z60 (JANSG2N7467U2) 2. Part number IRHNA58Z60 (JANSH2N7467U2)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Cu Br I LET (MeV/(mg/cm2)) 28 37 60 Energy (MeV) 261 285 344 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 40 30 30 30 25 15 37 30 30 30 23 15 33 25 25 20 15 8
35 30 25 20 15 10 5 0 0 -5 -10 VGS -15 -20
Cu Br I
VDS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNA57Z60, JANSR2N7467U2
Pre-Irradiation
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
1000
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
5.0V
5.0V
10 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
10 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
TJ = 25 C TJ = 150 C
100
RDS(on) , Drain-to-Source On Resistance (Normalized)
45A ID = 75 A
I D , Drain-to-Source Current (A)
1.5
1.0
0.5
10 5.0
V DS = 15 50V 25V 20s PULSE WIDTH 5.5 6.0 6.5 7.0 7.5 8.0
0.0 -60 -40 -20
VGS =12V 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHNA57Z60, JANSR2N7467U2
20000
C, Capacitance (pF)
15000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 45 A
VDS = 24V VDS = 15V
15
Coss
10000
Ciss
10
5000
5
Crss
0 1 10 100
0 0 25 50 75
FOR TEST CIRCUIT SEE FIGURE 13
100 125 150 175 200 225
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
TJ = 25 C TJ = 150 C
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
100
100s 1ms
100
10
10 Tc = 25C Tj = 150C Single Pulse 1 0.1 1 10
10ms
1
0.1 0.0
V GS = 0 V
0.5 1.0 1.5 2.0 2.5 3.0 3.5
100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHNA57Z60, JANSR2N7467U2
Pre-Irradiation
250
LIMITED BY PACKAGE
VDS VGS
RD
200
ID , Drain Current (A)
RG
D.U.T.
+
-V DD
150
VGS
Pulse Width 1 s Duty Factor 0.1 %
100
Fig 10a. Switching Time Test Circuit
50
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHNA57Z60, JANSR2N7467U2
1200
EAS , Single Pulse Avalanche Energy (mJ)
TOP BOTTOM
15V
1000
ID 34A 47A 75A
VDS
L
DRIVER
800
RG
D.U.T.
IAS
600
+ - VDD
A
VGS 20V
tp
400
0.01
Fig 12a. Unclamped Inductive Test Circuit
200
0 25 50 75 100 125 150
V(BR)DSS tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHNA57Z60, JANSR2N7467U2
Pre-Irradiation
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 25V, starting TJ = 25C, L= 0.3mH Peak IL = 75A, VGS = 12V A ISD 75A, di/dt 94A/s, VDD 30V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 24 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/2006
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